‘Universal’ memory aims to replace flash/DRAM

“A single “universal” memory technology that combines the speed
of DRAM with the non-volatility and density of flash memory was
recently invented at North Carolina State University, according to
researchers.

“The new memory technology, which uses a double floating-gate
field-effect-transistor (FET), should enable computers to power
down memories not currently being accessed, drastically cutting the
energy consumed by computers of all types, from mobile and desktop
computers to server farms and data centers, the researchers
say.”

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